TY - JOUR
T1 - Ultrathin-film hydrogen gas sensor with nanostructurally modified surface
AU - Tsukada, Keiji
AU - Takeichi, Shuzo
AU - Sakai, Kenji
AU - Kiwa, Toshihiko
PY - 2014
Y1 - 2014
N2 - The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.
AB - The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.
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U2 - 10.7567/JJAP.53.076701
DO - 10.7567/JJAP.53.076701
M3 - Article
AN - SCOPUS:84903624816
SN - 0021-4922
VL - 53
SP - 76701
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7
M1 - 076701
ER -