TiO2/TaON- and TiO2/BiOI-based solid-state solar cells

Bashir Ahmmad; Junichi Kurawaki; Takahiro Ohkubo; Fumihiko Hirose

doi:10.1061/(ASCE)EY.1943-7897.0000130

TiO₂/TaON- and TiO₂/BiOI-based solid-state solar cells

Bashir Ahmmad, Junichi Kurawaki, Takahiro Ohkubo, Fumihiko Hirose

研究成果 › 査読

4 被引用数 (Scopus)

抄録

A three-phase solid-state solar cell (SSSC) has been developed successfully using TaON nanoparticles or BiOI microspheres as a sensitizer material over a TiO₂ film and CuI as a hole collector. Stable current (I _sc)-voltage (V_oc) curves are found under ultraviolet UV visible light irradiation with an efficiency of 0.15% and 0.10% for TaON- and BiOI-based solar cells, respectively. The observed photocurrents in SSSCs are approximately 10 and 48 times higher than those in wet-type solar cells (WSCs) based on TaON and BiOI, respectively. A plausible mechanism of charge transfer and hole filling is discussed in terms of the band gap energy and band position of the semiconductor materials.

本文言語	English
ページ（範囲）	338-342
ページ数	5
ジャーナル	Journal of Energy Engineering
巻	139
号	4
DOI	https://doi.org/10.1061/(ASCE)EY.1943-7897.0000130
出版ステータス	Published - 12月 2013

ASJC Scopus subject areas

土木構造工学
再生可能エネルギー、持続可能性、環境
原子力エネルギーおよび原子力工学
エネルギー工学および電力技術
廃棄物管理と処理

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.1061/(ASCE)EY.1943-7897.0000130

他のファイルとリンク

引用スタイル

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title = "TiO2/TaON- and TiO2/BiOI-based solid-state solar cells",

abstract = "A three-phase solid-state solar cell (SSSC) has been developed successfully using TaON nanoparticles or BiOI microspheres as a sensitizer material over a TiO2 film and CuI as a hole collector. Stable current (I sc)-voltage (Voc) curves are found under ultraviolet UV visible light irradiation with an efficiency of 0.15% and 0.10% for TaON- and BiOI-based solar cells, respectively. The observed photocurrents in SSSCs are approximately 10 and 48 times higher than those in wet-type solar cells (WSCs) based on TaON and BiOI, respectively. A plausible mechanism of charge transfer and hole filling is discussed in terms of the band gap energy and band position of the semiconductor materials.",

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