TY - JOUR
T1 - Specific heat of aluminium-doped superconducting silicon carbide
AU - Kriener, M.
AU - Muranaka, T.
AU - Kikuchi, Y.
AU - Akimitsu, J.
AU - Maeno, Y.
PY - 2010
Y1 - 2010
N2 - The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.
AB - The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.
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U2 - 10.1088/1742-6596/200/1/012096
DO - 10.1088/1742-6596/200/1/012096
M3 - Conference article
AN - SCOPUS:77957034557
SN - 1742-6588
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - SECTION 1
M1 - 012096
ER -