抄録
Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2325-2328 |
| ページ数 | 4 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 39 |
| 号 | 4 B |
| DOI | |
| 出版ステータス | Published - 2000 |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）