Single-crystal growth and de Haas-van Alphen effect of YbAl3

T. Ebihara, S. Uji, C. Terakura, T. Terashima, E. Yamamoto, Y. Haga, Y. Inada, Y. Onuki

研究成果査読

30 被引用数 (Scopus)

抄録

We succeeded in observing the de Haas-van Alphen (dHvA) oscillation of YbAl3. The single crystals were grown by the self-flux method. The residual resistivity and residual resistivity ratio were 0.5 μΩ cm and 60, respectively. Three fundamental dHvA branches were detected for the magnetic field along the 〈1 0 0〉 direction. Their cyclotron masses were in the range from 8.1 to 22 m0, reflecting a relatively large electronic specific heat coefficient γ = 58 mJ/K2 mol.

本文言語English
ページ(範囲)754-755
ページ数2
ジャーナルPhysica B: Condensed Matter
281-282
DOI
出版ステータスPublished - 6月 1 2000
外部発表はい
イベントYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
継続期間: 8月 24 19998月 28 1999

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

フィンガープリント

「Single-crystal growth and de Haas-van Alphen effect of YbAl3」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル