Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Takashi Egawa; Yasufumi Kobayashi; Yasuhiko Hayashi; Tetsuo Soga; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/JJAP.29.L1133

Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Takashi Egawa, Yasufumi Kobayashi, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

研究成果 › 査読

10 被引用数 (Scopus)

抄録

Room-temperature CW operation of all-MOCVD-grown Al_0.3Ga_0.7As/GaAs SQW lasers on Si substrates with Al_0.5Ga_0.5As/Al_0.55Ga_0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al_0.5Ga_0.5As/Al_0.55Ga_0.45P intermediate layers are 2.23 kA/cm² and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

本文言語	English
ページ（範囲）	L1133-L1135
ジャーナル	Japanese Journal of Applied Physics
巻	29
号	7
DOI	https://doi.org/10.1143/JJAP.29.L1133
出版ステータス	Published - 7月 1990
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.29.L1133

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@article{facfc23dc6e9406586a555702c6039b4,

title = "Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers",

abstract = "Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.",

keywords = "Aigaas/aigap, Cw operation, Gaas/si, Laser, Mocvd, Photoluminescence, Quantum well, Tem",

author = "Takashi Egawa and Yasufumi Kobayashi and Yasuhiko Hayashi and Tetsuo Soga and Takashi Jimbo and Masayoshi Umeno",

year = "1990",

month = jul,

doi = "10.1143/JJAP.29.L1133",

language = "English",

volume = "29",

pages = "L1133--L1135",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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number = "7",

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T1 - Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

AU - Egawa, Takashi

AU - Kobayashi, Yasufumi

AU - Hayashi, Yasuhiko

AU - Soga, Tetsuo

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1990/7

Y1 - 1990/7

N2 - Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

AB - Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

KW - Aigaas/aigap

KW - Cw operation

KW - Gaas/si

KW - Laser

KW - Mocvd

KW - Photoluminescence

KW - Quantum well

KW - Tem

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DO - 10.1143/JJAP.29.L1133

M3 - Article

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SN - 0021-4922

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SP - L1133-L1135

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7

ER -

Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

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