An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.
|ジャーナル||Diamond and Related Materials|
|出版ステータス||Published - 2003|
ASJC Scopus subject areas
- 化学 (全般)