TY - GEN
T1 - Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy
AU - Emura, S.
AU - Higashi, K.
AU - Itadani, A.
AU - Torigoe, H.
AU - Kuroda, Y.
AU - Nishikawa, A.
AU - Fujiwara, Y.
AU - Asahi, H.
N1 - Funding Information:
This work is supported, in part, by a Grant-in-Aid for Creative Science Research No. 19GS1209 from the Japan Society for the Promotion of Science. XEOL and XEOL-PLXE spectra were measured at beamline BL9A of Photon Factory in KEK in cooperation with Institute of Material Structure Science through Proposal 2010G643.
PY - 2012
Y1 - 2012
N2 - X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.
AB - X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.
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U2 - 10.1557/opl.2011.1241
DO - 10.1557/opl.2011.1241
M3 - Conference contribution
AN - SCOPUS:84455209591
SN - 9781605113197
T3 - Materials Research Society Symposium Proceedings
SP - 15
EP - 20
BT - Rare-Earth Doping of Advanced Materials for Photonic Applications - 2011
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -