Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

研究成果

本文言語	English
ページ（範囲）	124-125
ページ数	2
ジャーナル	Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations
出版ステータス	Published - 2002

引用スタイル

TY - JOUR

T1 - Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

AU - Yamashita, Yoshifumi

PY - 2002

Y1 - 2002

M3 - Article

SP - 124

EP - 125

JO - Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations

JF - Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations

ER -