抄録
We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion.
本文言語 | English |
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ページ(範囲) | 5153-5158 |
ページ数 | 6 |
ジャーナル | Nano Letters |
巻 | 13 |
号 | 11 |
DOI | |
出版ステータス | Published - 11月 13 2013 |
ASJC Scopus subject areas
- バイオエンジニアリング
- 化学 (全般)
- 材料科学(全般)
- 凝縮系物理学
- 機械工学