TY - JOUR
T1 - Non-volatile organic memory with sub-millimetre bending radius
AU - Kim, Richard Hahnkee
AU - Kim, Hae Jin
AU - Bae, Insung
AU - Hwang, Sun Kak
AU - Velusamy, Dhinesh Babu
AU - Cho, Suk Man
AU - Takaishi, Kazuto
AU - Muto, Tsuyoshi
AU - Hashizume, Daisuke
AU - Uchiyama, Masanobu
AU - André, Pascal
AU - Mathevet, Fabrice
AU - Heinrich, Benoit
AU - Aoyama, Tetsuya
AU - Kim, Dae Eun
AU - Lee, Hyungsuk
AU - Ribierre, Jean Charles
AU - Park, Cheolmin
N1 - Funding Information:
This project was supported by DAPA, ADD and the Converging Research Center Program through the Ministry of Education, Science, and Technology (MEST) (no. 2011K000631). This research was also supported by the Second Stage of the Brain Korea 21 Project in 2006 and the National Research Foundation of Korea (NRF) grant funded by the Korea government(MSIP) (no. 2007-0056091), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning (2010-0019313), National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. 2010-0018289) and Basic Science Research Program through the NRF funded by the MEST (NRF-2012R1A1A1042311). J.-C.R. acknowledges support by the Basic Science Researcher Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (no. 2012-0000543). T.A. would like to acknowledge funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (no. 22350084). The synchrotron radiation experiments were performed at the RIKEN Materials Science Beamline (BL44B2) at SPring-8 with the approval of RIKEN (proposal no. 20090100). P.A. would like to thank the Canon Foundation in Europe for having supported his visiting scientist position at RIKEN and SUPA-St Andrews for his advanced research fellowship.
Publisher Copyright:
© 2014 Macmillan Publishers Limited. All rights reserved.
PY - 2014/4/8
Y1 - 2014/4/8
N2 - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.
AB - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.
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U2 - 10.1038/ncomms4583
DO - 10.1038/ncomms4583
M3 - Article
AN - SCOPUS:84906702995
SN - 2041-1723
VL - 5
JO - Nature Communications
JF - Nature Communications
M1 - 3583
ER -