TY - JOUR
T1 - Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal
AU - Harafuji, Kenji
AU - Kawamura, Katsuyuki
PY - 2011/8/1
Y1 - 2011/8/1
N2 - A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.
AB - A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.
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U2 - 10.1143/JJAP.50.08JG03
DO - 10.1143/JJAP.50.08JG03
M3 - Article
AN - SCOPUS:80051988014
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8 PART 2
M1 - 08JG03
ER -