Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Masayuki Okamoto; Genki Toyoda; Eiji Hiraki; Toshihiko Tanaka; Tamotsu Hashizume; Tetsu Kachi

doi:10.1109/ECCE.2011.6064002

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Masayuki Okamoto, Genki Toyoda, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Tetsu Kachi

研究成果

16 被引用数 (Scopus)

抄録

Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN-based transistor and Schottky barrier diode (SBD) for a simulation program with integrated circuit emphasis (SPICE). The results of the SPICE simulation show that the static and dynamic characteristics of GaN-based devices are precisely simulated by the SPICE models. The application of a GaN-based device to a single-phase AC-AC direct converter results in a reduction of power loss of over 30% compared with a silicon-based one.

本文言語	English
ホスト出版物のタイトル	IEEE Energy Conversion Congress and Exposition
ホスト出版物のサブタイトル	Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings
ページ	1795-1800
ページ数	6
DOI	https://doi.org/10.1109/ECCE.2011.6064002
出版ステータス	Published - 11月 28 2011
外部発表	はい
イベント	3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011 - Phoenix, AZ 継続期間: 9月 17 2011 → 9月 22 2011

出版物シリーズ

名前	IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Other

Other	3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011
国/地域	United States
City	Phoenix, AZ
Period	9/17/11 → 9/22/11

ASJC Scopus subject areas

エネルギー工学および電力技術
再生可能エネルギー、持続可能性、環境

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.1109/ECCE.2011.6064002

他のファイルとリンク

引用スタイル

Okamoto, M., Toyoda, G., Hiraki, E., Tanaka, T., Hashizume, T., & Kachi, T. (2011). Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. In IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings (pp. 1795-1800). [6064002] (IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings). https://doi.org/10.1109/ECCE.2011.6064002

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. / Okamoto, Masayuki; Toyoda, Genki; Hiraki, Eiji その他.

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. p. 1795-1800 6064002 (IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings).

研究成果

Okamoto, M, Toyoda, G, Hiraki, E, Tanaka, T, Hashizume, T & Kachi, T 2011, Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. in IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings., 6064002, IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings, pp. 1795-1800, 3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011, Phoenix, AZ, United States, 9/17/11. https://doi.org/10.1109/ECCE.2011.6064002

Okamoto M, Toyoda G, Hiraki E, Tanaka T, Hashizume T, Kachi T. Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. In IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. p. 1795-1800. 6064002. (IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings). doi: 10.1109/ECCE.2011.6064002

Okamoto, Masayuki ; Toyoda, Genki ; Hiraki, Eiji その他. / Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model. IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. 2011. pp. 1795-1800 (IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings).

@inproceedings{6231b3e20b0b4380a9844f52e3296058,

title = "Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model",

abstract = "Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN-based transistor and Schottky barrier diode (SBD) for a simulation program with integrated circuit emphasis (SPICE). The results of the SPICE simulation show that the static and dynamic characteristics of GaN-based devices are precisely simulated by the SPICE models. The application of a GaN-based device to a single-phase AC-AC direct converter results in a reduction of power loss of over 30% compared with a silicon-based one.",

keywords = "AC-AC direct converter, HEMT, Loss evaluation, SBD, Spice Model, gallium nitride",

author = "Masayuki Okamoto and Genki Toyoda and Eiji Hiraki and Toshihiko Tanaka and Tamotsu Hashizume and Tetsu Kachi",

year = "2011",

month = nov,

day = "28",

doi = "10.1109/ECCE.2011.6064002",

language = "English",

isbn = "9781457705427",

series = "IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings",

pages = "1795--1800",

booktitle = "IEEE Energy Conversion Congress and Exposition",

note = "3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011 ; Conference date: 17-09-2011 Through 22-09-2011",

}

TY - GEN

T1 - Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

AU - Okamoto, Masayuki

AU - Toyoda, Genki

AU - Hiraki, Eiji

AU - Tanaka, Toshihiko

AU - Hashizume, Tamotsu

AU - Kachi, Tetsu

PY - 2011/11/28

Y1 - 2011/11/28

N2 - Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN-based transistor and Schottky barrier diode (SBD) for a simulation program with integrated circuit emphasis (SPICE). The results of the SPICE simulation show that the static and dynamic characteristics of GaN-based devices are precisely simulated by the SPICE models. The application of a GaN-based device to a single-phase AC-AC direct converter results in a reduction of power loss of over 30% compared with a silicon-based one.

AB - Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN-based transistor and Schottky barrier diode (SBD) for a simulation program with integrated circuit emphasis (SPICE). The results of the SPICE simulation show that the static and dynamic characteristics of GaN-based devices are precisely simulated by the SPICE models. The application of a GaN-based device to a single-phase AC-AC direct converter results in a reduction of power loss of over 30% compared with a silicon-based one.

KW - AC-AC direct converter

KW - HEMT

KW - Loss evaluation

KW - SBD

KW - Spice Model

KW - gallium nitride

UR - http://www.scopus.com/inward/record.url?scp=81855185990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855185990&partnerID=8YFLogxK

U2 - 10.1109/ECCE.2011.6064002

DO - 10.1109/ECCE.2011.6064002

M3 - Conference contribution

AN - SCOPUS:81855185990

SN - 9781457705427

T3 - IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

SP - 1795

EP - 1800

BT - IEEE Energy Conversion Congress and Exposition

T2 - 3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011

Y2 - 17 September 2011 through 22 September 2011

ER -

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

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出版物シリーズ

Other

ASJC Scopus subject areas

UN SDG

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