抄録
The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low oxidation temperature exhibited clear Coulomb blockade oscillations at room temperature. The results show that at low oxidation temperature, the small roughness inherent to the resist was transferred to the nanowire during etching.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2869-2873 |
| ページ数 | 5 |
| ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 巻 | 21 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2003 |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子工学および電気工学