High-field magnetization of URu2Si2 under high pressure

T. Inoue, K. Kindo, H. Okuni, K. Sugiyama, Y. Haga, E. Yamamoto, T. C. Kobayashi, Y. Uwatoko, Y. Onuki

研究成果査読

6 被引用数 (Scopus)

抄録

The temperature dependence of the magnetic susceptibility and the high-field magnetization up to 55 T are measured for URu2Si2 under high pressures up to 1 GPa. Both Tχ(max) and TN in the susceptibility increase with increasing pressure. The value of the susceptibility below Tχ(max) decreases with increasing pressure. The three high-field metamagnetic transitions at Hc1 = 35.1 T, Hc2 = 36.5 T and Hc3 = 39.6 T at ambient pressure, show different pressure-dependent behaviors. The metamagnetic transition at Hc1 broadens but survives and its transition field increases with increasing pressure. However, the transition at Hc2 is smeared out and disappears above 0.4 GPa. The transition at Hc3 broadens more clearly than the transition at Hc1. The fact that both Tχ(max) and the metamagnetic transition fields increase suggests that the interaction between the f-electrons and the conduction electrons is enhanced by pressure.

本文言語English
ページ(範囲)271-275
ページ数5
ジャーナルPhysica B: Condensed Matter
294-295
DOI
出版ステータスPublished - 1月 2001
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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