Fermi level tuning of Ag-doped Bi                         
                        2
                                                 Se                         
                        3
                                                  topological insulator

Eri Uesugi; Takaki Uchiyama; Hidenori Goto; Hiromi Ota; Teppei Ueno; Hirokazu Fujiwara; Kensei Terashima; Takayoshi Yokoya; Fumihiko Matsui; Jun Akimitsu; Kaya Kobayashi; Yoshihiro Kubozono

doi:10.1038/s41598-019-41906-7

Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator

Eri Uesugi, Takaki Uchiyama, Hidenori Goto, Hiromi Ota, Teppei Ueno, Hirokazu Fujiwara, Kensei Terashima, Takayoshi Yokoya, Fumihiko Matsui, Jun Akimitsu, Kaya Kobayashi, Yoshihiro Kubozono

異分野基礎科学研究所

研究成果 › 査読

18 被引用数 (Scopus)

抄録

The temperature dependence of the resistivity (ρ) of Ag-doped Bi ₂ Se ₃ (Ag _x Bi _2−x Se ₃ ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi ₂ Se ₃ at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi ₂ Se ₃ can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag _x Bi _2−x Se ₃ and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag _x Bi _2−x Se ₃ provides metallic behavior that is similar to that of non-doped Bi ₂ Se ₃ , indicating a successful upward tuning of the Fermi level.

本文言語	English
論文番号	5376
ページ（範囲）	5376
ジャーナル	Scientific reports
巻	9
号	1
DOI	https://doi.org/10.1038/s41598-019-41906-7
出版ステータス	Published - 3月 29 2019

ASJC Scopus subject areas

一般

文献へのアクセス

10.1038/s41598-019-41906-7

他のファイルとリンク

引用スタイル

Uesugi, E., Uchiyama, T., Goto, H., Ota, H., Ueno, T., Fujiwara, H., Terashima, K., Yokoya, T., Matsui, F., Akimitsu, J., Kobayashi, K., & Kubozono, Y. (2019). Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. Scientific reports, 9(1), 5376. [5376]. https://doi.org/10.1038/s41598-019-41906-7

Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. / Uesugi, Eri; Uchiyama, Takaki; Goto, Hidenori その他.

In: Scientific reports, Vol. 9, No. 1, 5376, 29.03.2019, p. 5376.

研究成果 › 査読

Uesugi, E, Uchiyama, T, Goto, H, Ota, H, Ueno, T, Fujiwara, H, Terashima, K, Yokoya, T, Matsui, F, Akimitsu, J , Kobayashi, K & Kubozono, Y 2019, 'Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator', Scientific reports, vol. 9, no. 1, 5376, pp. 5376. https://doi.org/10.1038/s41598-019-41906-7

Uesugi E, Uchiyama T, Goto H, Ota H, Ueno T, Fujiwara H その他. Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. Scientific reports. 2019 3月 29;9(1):5376. 5376. doi: 10.1038/s41598-019-41906-7

Uesugi, Eri ; Uchiyama, Takaki ; Goto, Hidenori その他. / Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. In: Scientific reports. 2019 ; Vol. 9, No. 1. pp. 5376.

@article{b269bc20dec54276a3111d53687bf4f7,

title = "Fermi level tuning of Ag-doped Bi 2 Se 3 topological insulator",

abstract = " The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level. ",

author = "Eri Uesugi and Takaki Uchiyama and Hidenori Goto and Hiromi Ota and Teppei Ueno and Hirokazu Fujiwara and Kensei Terashima and Takayoshi Yokoya and Fumihiko Matsui and Jun Akimitsu and Kaya Kobayashi and Yoshihiro Kubozono",

note = "Funding Information: The authors greatly appreciate Prof. Justin Ye of University of Groningen and Prof. Harald O. Jeschke of Okayama University for their valuable discussion. Also the authors are debted Ms. Tong He for her valuable assistance for sample characterization. This study was partly supported by Grants-in-aid (26105004, 26400361, 14J00228 and 17K05500) from MEXT, by the ACT-C program (No. JPMJCR12YW) of JST, and by the Program for Promoting the Enhancement of Research Universities. Publisher Copyright: {\textcopyright} 2019, The Author(s).",

year = "2019",

month = mar,

day = "29",

doi = "10.1038/s41598-019-41906-7",

language = "English",

volume = "9",

pages = "5376",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

number = "1",

}

TY - JOUR

T1 - Fermi level tuning of Ag-doped Bi 2 Se 3 topological insulator

AU - Uesugi, Eri

AU - Uchiyama, Takaki

AU - Goto, Hidenori

AU - Ota, Hiromi

AU - Ueno, Teppei

AU - Fujiwara, Hirokazu

AU - Terashima, Kensei

AU - Yokoya, Takayoshi

AU - Matsui, Fumihiko

AU - Akimitsu, Jun

AU - Kobayashi, Kaya

AU - Kubozono, Yoshihiro

N1 - Funding Information: The authors greatly appreciate Prof. Justin Ye of University of Groningen and Prof. Harald O. Jeschke of Okayama University for their valuable discussion. Also the authors are debted Ms. Tong He for her valuable assistance for sample characterization. This study was partly supported by Grants-in-aid (26105004, 26400361, 14J00228 and 17K05500) from MEXT, by the ACT-C program (No. JPMJCR12YW) of JST, and by the Program for Promoting the Enhancement of Research Universities. Publisher Copyright: © 2019, The Author(s).

PY - 2019/3/29

Y1 - 2019/3/29

N2 - The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

AB - The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

UR - http://www.scopus.com/inward/record.url?scp=85063751772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063751772&partnerID=8YFLogxK

U2 - 10.1038/s41598-019-41906-7

DO - 10.1038/s41598-019-41906-7

M3 - Article

C2 - 30926890

AN - SCOPUS:85063751772

SN - 2045-2322

VL - 9

SP - 5376

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 5376

ER -

Fermi level tuning of Ag-doped Bi 2 Se 3 topological insulator

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル

Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator