TY - JOUR
T1 - Evaluation of OKI SOI technology
AU - Ikegami, Y.
AU - Arai, Y.
AU - Hara, K.
AU - Hazumi, M.
AU - Ikeda, H.
AU - Ishino, H.
AU - Kohriki, T.
AU - Miyake, H.
AU - Mochizuki, A.
AU - Terada, S.
AU - Tsuboyama, T.
AU - Unno, Y.
PY - 2007/9/1
Y1 - 2007/9/1
N2 - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.
AB - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.
KW - CMOS
KW - FET
KW - Radiation damage
KW - SOI
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U2 - 10.1016/j.nima.2007.05.272
DO - 10.1016/j.nima.2007.05.272
M3 - Article
AN - SCOPUS:34547753560
SN - 0168-9002
VL - 579
SP - 706
EP - 711
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 2 SPEC. ISS.
ER -