Energy distribution and yield measurement of secondary electrons to evaluate the equilibrium charging voltage of an isolated electrode during negative-ion implantation

Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa

研究成果査読

9 被引用数 (Scopus)

抄録

The negative-ion implantation method has the advantage that the charging voltage of an isolated electrode, or electrically insulated conductive material, stays as low as at most +10 V during implantation without any charge neutralization. The significant parameters, the energy distribution and the yield of secondary electrons in negative-ion implantation, have been measured in the energy range below 40 keV. The results show that the energy distribution, which is independent of ion energy in shape, has a low energy peak together with a long tail extending toward the high-energy region, and that the yield increases with ion energy. Furthermore, the equilibrium charging-voltage equation of an isolated electrode during negative-ion implantation is presented. The charging voltages estimated according to the equation are found to be in good agreement with those measured directly with a high-input-impedance voltmeter. It is also demonstrated that the charging voltage is proportional to the yield and to ion velocity in the linear region of the kinetic electron emission.

本文言語English
ページ(範囲)6487-6491
ページ数5
ジャーナルJapanese Journal of Applied Physics
34
12
DOI
出版ステータスPublished - 12月 1995
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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