De Haas-van Alphen effect in CeRh2Si2 under pressure

S. Araki; M. Nakashima; H. Nakawaki; R. Settai; H. Harima; Y. Onuki

doi:10.1016/S0921-4526(01)01359-X

De Haas-van Alphen effect in CeRh₂Si₂ under pressure

S. Araki, M. Nakashima, H. Nakawaki, R. Settai, H. Harima, Y. Onuki

研究成果 › 査読

抄録

We observed de Haas-van Alphen (dHvA) oscillations in CeRh₂Si₂ at 1.3 GPa, higher than the quantum critical pressure p_c≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m₀, 29m₀ and 31m₀, about 4 times larger than the corresponding band masses.

本文言語	English
ページ（範囲）	435-436
ページ数	2
ジャーナル	Physica B: Condensed Matter
巻	312-313
DOI	https://doi.org/10.1016/S0921-4526(01)01359-X
出版ステータス	Published - 3月 2002
外部発表	はい
イベント	International Conference on Strongly Correlated Electrons - Ann Arbor, MI 継続期間: 8月 6 2002 → 8月 6 2002

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1016/S0921-4526(01)01359-X

他のファイルとリンク

引用スタイル

@article{a0854d078b0c419e9f3f6b3fb2877a5b,

title = "De Haas-van Alphen effect in CeRh2Si2 under pressure",

abstract = "We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.",

keywords = "CeRhSi, Quantum critical point, dHvA effect",

author = "S. Araki and M. Nakashima and H. Nakawaki and R. Settai and H. Harima and Y. Onuki",

note = "Funding Information: This work was supported by the COE Research (10CE2004) from the Ministry of Education, Culture, Sports, Science and Technology. S. Araki have been supported by JSPS Research Fellowships for Young Scientists.; International Conference on Strongly Correlated Electrons ; Conference date: 06-08-2002 Through 06-08-2002",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01359-X",

language = "English",

volume = "312-313",

pages = "435--436",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - De Haas-van Alphen effect in CeRh2Si2 under pressure

AU - Araki, S.

AU - Nakashima, M.

AU - Nakawaki, H.

AU - Settai, R.

AU - Harima, H.

AU - Onuki, Y.

N1 - Funding Information: This work was supported by the COE Research (10CE2004) from the Ministry of Education, Culture, Sports, Science and Technology. S. Araki have been supported by JSPS Research Fellowships for Young Scientists.

PY - 2002/3

Y1 - 2002/3

N2 - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

AB - We observed de Haas-van Alphen (dHvA) oscillations in CeRh2Si2 at 1.3 GPa, higher than the quantum critical pressure pc≃1.0 GPa. Three observed dHvA branches correspond to the result of the 4f-itinerant model. Their cyclotron masses are large, being 24m0, 29m0 and 31m0, about 4 times larger than the corresponding band masses.

KW - CeRhSi

KW - Quantum critical point

KW - dHvA effect

UR - http://www.scopus.com/inward/record.url?scp=0036504201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036504201&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01359-X

DO - 10.1016/S0921-4526(01)01359-X

M3 - Conference article

AN - SCOPUS:0036504201

SN - 0921-4526

VL - 312-313

SP - 435

EP - 436

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - International Conference on Strongly Correlated Electrons

Y2 - 6 August 2002 through 6 August 2002

ER -