ZnO nanowire and WS2 nanotube electronics

Husnu Emrah Unalan, Yang Yang, Yan Zhang, Pritesh Hiralal, Daniel Kuo, Sharvari Dalal, Tim Butler, Seung Nam Cha, Jae Eun Jang, Konstantina Chremmou, Georgios Lentaris, Di Wei, Rital Rosentsveig, Kenichi Suzuki, Hidetoshi Matsumoto, Mie Minagawa, Yasuhiko Hayashi, Manish Chhowalla, Akihiko Tanioka, William I. MilneReshef Tenne, Geham A.J. Amaratunga

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS2 nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm2 V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm2 /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.

Original languageEnglish
Pages (from-to)2988-3000
Number of pages13
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2008
Externally publishedYes


  • Nanotubes
  • Nanowires
  • Solar cells
  • Transistors
  • Tungsten disulfide
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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