Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment

Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa

Research output: Contribution to journalArticle

Abstract

The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

Original languageEnglish
Pages (from-to)4785-4788
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 A
Publication statusPublished - Dec 1 1996
Externally publishedYes

Keywords

  • Kinetic emission
  • Leakage current
  • Negative-ion implantation
  • Secondary electron emission
  • Silicon dioxide film
  • Yield

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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