Abstract
The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.
| Original language | English |
|---|---|
| Pages (from-to) | 4785-4788 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 9 A |
| Publication status | Published - Dec 1 1996 |
| Externally published | Yes |
Keywords
- Kinetic emission
- Leakage current
- Negative-ion implantation
- Secondary electron emission
- Silicon dioxide film
- Yield
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)