Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment

Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa

Research output: Contribution to journalArticle

Abstract

The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

Original languageEnglish
Pages (from-to)4785-4788
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 A
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Ion bombardment
negative ions
bombardment
Negative ions
Silica
silicon dioxide
Electrons
Insulating materials
electrons
insulation
charging
Conductive materials
Ions
Ion implantation
Leakage currents
detachment
ion currents
ion implantation
unity
tendencies

Keywords

  • Kinetic emission
  • Leakage current
  • Negative-ion implantation
  • Secondary electron emission
  • Silicon dioxide film
  • Yield

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment. / Toyota, Yoshitaka; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 9 A, 1996, p. 4785-4788.

Research output: Contribution to journalArticle

@article{9133c72c8a554e29adf4fe252e997af7,
title = "Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment",
abstract = "The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.",
keywords = "Kinetic emission, Leakage current, Negative-ion implantation, Secondary electron emission, Silicon dioxide film, Yield",
author = "Yoshitaka Toyota and Hiroshi Tsuji and Yasuhito Gotoh and Junzo Ishikawa",
year = "1996",
language = "English",
volume = "35",
pages = "4785--4788",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",
number = "9 A",

}

TY - JOUR

T1 - Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment

AU - Toyota, Yoshitaka

AU - Tsuji, Hiroshi

AU - Gotoh, Yasuhito

AU - Ishikawa, Junzo

PY - 1996

Y1 - 1996

N2 - The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

AB - The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

KW - Kinetic emission

KW - Leakage current

KW - Negative-ion implantation

KW - Secondary electron emission

KW - Silicon dioxide film

KW - Yield

UR - http://www.scopus.com/inward/record.url?scp=0030232370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030232370&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030232370

VL - 35

SP - 4785

EP - 4788

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -