Very low driving-voltage InGaAlAs/lnAlAs electroabsorption modulators operating at 40 Gbit/s

H. Fukano, T. Yamanaka, M. Tamura, Y. Kondo, T. Saitoh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.

Original languageEnglish
Pages (from-to)211-212
Number of pages2
JournalElectronics Letters
Volume41
Issue number4
DOIs
Publication statusPublished - Feb 17 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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