Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s

Hideki Fukano, Takayuki Yamanaka, Munehisa Tamura, Yasuhiro Kondo

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.

Original languageEnglish
Pages (from-to)2219-2224
Number of pages6
JournalJournal of Lightwave Technology
Volume24
Issue number5
DOIs
Publication statusPublished - May 2006
Externally publishedYes

Fingerprint

Electroabsorption modulators
low voltage
modulators
Electric potential
extinction
polyimides
Polyimides
electric potential

Keywords

  • Electroabsorption
  • Electroabsorption modulator (EAM)
  • InGaAlAs/InGaAs
  • Low-driving voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s. / Fukano, Hideki; Yamanaka, Takayuki; Tamura, Munehisa; Kondo, Yasuhiro.

In: Journal of Lightwave Technology, Vol. 24, No. 5, 05.2006, p. 2219-2224.

Research output: Contribution to journalArticle

Fukano, Hideki ; Yamanaka, Takayuki ; Tamura, Munehisa ; Kondo, Yasuhiro. / Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s. In: Journal of Lightwave Technology. 2006 ; Vol. 24, No. 5. pp. 2219-2224.
@article{2e7b79b6aad0452da88668857fa280dd,
title = "Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s",
abstract = "This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.",
keywords = "Electroabsorption, Electroabsorption modulator (EAM), InGaAlAs/InGaAs, Low-driving voltage",
author = "Hideki Fukano and Takayuki Yamanaka and Munehisa Tamura and Yasuhiro Kondo",
year = "2006",
month = "5",
doi = "10.1109/JLT.2006.872310",
language = "English",
volume = "24",
pages = "2219--2224",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s

AU - Fukano, Hideki

AU - Yamanaka, Takayuki

AU - Tamura, Munehisa

AU - Kondo, Yasuhiro

PY - 2006/5

Y1 - 2006/5

N2 - This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.

AB - This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.

KW - Electroabsorption

KW - Electroabsorption modulator (EAM)

KW - InGaAlAs/InGaAs

KW - Low-driving voltage

UR - http://www.scopus.com/inward/record.url?scp=33646947270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646947270&partnerID=8YFLogxK

U2 - 10.1109/JLT.2006.872310

DO - 10.1109/JLT.2006.872310

M3 - Article

AN - SCOPUS:33646947270

VL - 24

SP - 2219

EP - 2224

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 5

ER -