Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s

Hideki Fukano, Takayuki Yamanaka, Munehisa Tamura, Yasuhiro Kondo

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.

Original languageEnglish
Pages (from-to)2219-2224
Number of pages6
JournalJournal of Lightwave Technology
Volume24
Issue number5
DOIs
Publication statusPublished - May 1 2006
Externally publishedYes

Keywords

  • Electroabsorption
  • Electroabsorption modulator (EAM)
  • InGaAlAs/InGaAs
  • Low-driving voltage

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s'. Together they form a unique fingerprint.

  • Cite this