Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Eiji Shikoh, Akihiko Fujiwara

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function 0 from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μp and the on-off ratio in the perylene FET increase with an increase in φ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small φ. These results can be reasonably explained on the basis of energy barrier for hole or electron.

Original languageEnglish
Article number053508
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
Publication statusPublished - 2006

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field effect transistors
electrodes
output
metals
conduction
thin films
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes. / Ohta, Toshio; Nagano, Takayuki; Ochi, Kenji; Kubozono, Yoshihiro; Shikoh, Eiji; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 89, No. 5, 053508, 2006.

Research output: Contribution to journalArticle

Ohta, Toshio ; Nagano, Takayuki ; Ochi, Kenji ; Kubozono, Yoshihiro ; Shikoh, Eiji ; Fujiwara, Akihiko. / Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes. In: Applied Physics Letters. 2006 ; Vol. 89, No. 5.
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