Unveiling the magic of H2S on the CVD-Al2O3 coating

T. Oshika, A. Nishiyama, K. Nakaso, M. Shimada, K. Okuyama

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The role of H2S in the mechanism of CVD-Al2O3 coating was investigated by measuring particles suspended in the gas phase with an optical particle counter. H2S doping of the CVD-Al2O3 process improves the homogeneity of thickness and growth rate of the Al2O3 layer. The number of particles produced in the reactor whose size was larger than 200 nm was dramatically reduced by H2S doping. The effect of H2S doping appears to be a reduction of the size of Al2O3 particles present in the reactor. These smaller particles have a greater mobility, which will allow them to arrive at the surface, regardless of the shape or arrangement of the substrate inside the reactor.

Original languageEnglish
Pages (from-to)Pr8-877 - Pr8-883
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - Sep 1 1999
Externally publishedYes
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: Sep 5 1999Sep 10 1999

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Oshika, T., Nishiyama, A., Nakaso, K., Shimada, M., & Okuyama, K. (1999). Unveiling the magic of H2S on the CVD-Al2O3 coating. Journal De Physique. IV : JP, 9 pt 2(8), Pr8-877 - Pr8-883.