Unveiling the Magic of H2S on the CVD-AI2O3 Coating

Takatoshi Oshika; Akio Njshiyama; Yoshifumi Ito; Kouichi Nakaso; Manabu Shimada

doi:10.1252/kakoronbunshu.26.749

Unveiling the Magic of H₂S on the CVD-AI₂O₃ Coating

Takatoshi Oshika, Akio Njshiyama, Yoshifumi Ito, Kouichi Nakaso, Manabu Shimada

Research output: Contribution to journal › Article › peer-review

Abstract

Achieving a uniform film thickness profile over a substrate has been difficult in CVD-AI₂O₃ coating processes. Although this problem can be solved by H₂S-doping to the source gas mixture, AICI₃/CO₂/H₂, the role of H₂S in the mechanisms of the CVD coating have not been clarified. In this study, the effects of H₂S-doping on the improvement of the uniformity of a coated layer is studied, focusing on the particles generated in the gas phase. It is found in the measurement of gasborne particles that the number concentration of particles larger than 200 nm in diameter is reduced dramatically by the H₂S-doping. The concentration is over 10⁸ particles/m³ when no H₂S is doped, while it is less than 10⁶ particles/m³ at 0.20% doping. The improvement of the coating by H₂S-doping is concluded to be caused by a size reduction of particulate matters of the A1²O³ precursors that leads to an increase of the diffusivity.

Original language	English
Pages (from-to)	749-753
Number of pages	5
Journal	Kagaku Kogaku Ronbunshu
Volume	26
Issue number	6
DOIs	https://doi.org/10.1252/kakoronbunshu.26.749
Publication status	Published - 2000
Externally published	Yes

Keywords

aluminum oxide
chemical vapor deposition
measurement of particles generated in gas phase
particle diffusivity
surface coating

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

Access to Document

10.1252/kakoronbunshu.26.749

Cite this

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title = "Unveiling the Magic of H2S on the CVD-AI2O3 Coating",

abstract = "Achieving a uniform film thickness profile over a substrate has been difficult in CVD-AI2O3 coating processes. Although this problem can be solved by H2S-doping to the source gas mixture, AICI3/CO2/H2, the role of H2S in the mechanisms of the CVD coating have not been clarified. In this study, the effects of H2S-doping on the improvement of the uniformity of a coated layer is studied, focusing on the particles generated in the gas phase. It is found in the measurement of gasborne particles that the number concentration of particles larger than 200 nm in diameter is reduced dramatically by the H2S-doping. The concentration is over 108 particles/m3 when no H2S is doped, while it is less than 106 particles/m3 at 0.20% doping. The improvement of the coating by H2S-doping is concluded to be caused by a size reduction of particulate matters of the A12O3 precursors that leads to an increase of the diffusivity.",

keywords = "aluminum oxide, chemical vapor deposition, measurement of particles generated in gas phase, particle diffusivity, surface coating",

author = "Takatoshi Oshika and Akio Njshiyama and Yoshifumi Ito and Kouichi Nakaso and Manabu Shimada",

year = "2000",

doi = "10.1252/kakoronbunshu.26.749",

language = "English",

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publisher = "Society of Chemical Engineers, Japan",

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AU - Oshika, Takatoshi

AU - Njshiyama, Akio

AU - Ito, Yoshifumi

AU - Nakaso, Kouichi

AU - Shimada, Manabu

PY - 2000

Y1 - 2000

N2 - Achieving a uniform film thickness profile over a substrate has been difficult in CVD-AI2O3 coating processes. Although this problem can be solved by H2S-doping to the source gas mixture, AICI3/CO2/H2, the role of H2S in the mechanisms of the CVD coating have not been clarified. In this study, the effects of H2S-doping on the improvement of the uniformity of a coated layer is studied, focusing on the particles generated in the gas phase. It is found in the measurement of gasborne particles that the number concentration of particles larger than 200 nm in diameter is reduced dramatically by the H2S-doping. The concentration is over 108 particles/m3 when no H2S is doped, while it is less than 106 particles/m3 at 0.20% doping. The improvement of the coating by H2S-doping is concluded to be caused by a size reduction of particulate matters of the A12O3 precursors that leads to an increase of the diffusivity.

AB - Achieving a uniform film thickness profile over a substrate has been difficult in CVD-AI2O3 coating processes. Although this problem can be solved by H2S-doping to the source gas mixture, AICI3/CO2/H2, the role of H2S in the mechanisms of the CVD coating have not been clarified. In this study, the effects of H2S-doping on the improvement of the uniformity of a coated layer is studied, focusing on the particles generated in the gas phase. It is found in the measurement of gasborne particles that the number concentration of particles larger than 200 nm in diameter is reduced dramatically by the H2S-doping. The concentration is over 108 particles/m3 when no H2S is doped, while it is less than 106 particles/m3 at 0.20% doping. The improvement of the coating by H2S-doping is concluded to be caused by a size reduction of particulate matters of the A12O3 precursors that leads to an increase of the diffusivity.

KW - aluminum oxide

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KW - measurement of particles generated in gas phase

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