Unveiling the magic of H2S on the CVD-Al2O3 coating

T. Oshika, A. Nishiyama, Koichi Nakaso, M. Shimada, K. Okuyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The role of H2S in the mechanism of CVD-Al2O3 coating was investigated by measuring particles suspended in the gas phase with an optical particle counter. H2S doping of the CVD-Al2O3 process improves the homogeneity of thickness and growth rate of the Al2O3 layer. The number of particles produced in the reactor whose size was larger than 200 nm was dramatically reduced by H2S doping. The effect of H2S doping appears to be a reduction of the size of Al2O3 particles present in the reactor. These smaller particles have a greater mobility, which will allow them to arrive at the surface, regardless of the shape or arrangement of the substrate inside the reactor.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - Sep 1999
Externally publishedYes

Fingerprint

Chemical vapor deposition
Doping (additives)
vapor deposition
coatings
Coatings
reactors
Radiation counters
radiation counters
Gases
homogeneity
Substrates
vapor phases

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Oshika, T., Nishiyama, A., Nakaso, K., Shimada, M., & Okuyama, K. (1999). Unveiling the magic of H2S on the CVD-Al2O3 coating. Journal De Physique. IV : JP, 9 pt 2(8).

Unveiling the magic of H2S on the CVD-Al2O3 coating. / Oshika, T.; Nishiyama, A.; Nakaso, Koichi; Shimada, M.; Okuyama, K.

In: Journal De Physique. IV : JP, Vol. 9 pt 2, No. 8, 09.1999.

Research output: Contribution to journalArticle

Oshika, T, Nishiyama, A, Nakaso, K, Shimada, M & Okuyama, K 1999, 'Unveiling the magic of H2S on the CVD-Al2O3 coating', Journal De Physique. IV : JP, vol. 9 pt 2, no. 8.
Oshika T, Nishiyama A, Nakaso K, Shimada M, Okuyama K. Unveiling the magic of H2S on the CVD-Al2O3 coating. Journal De Physique. IV : JP. 1999 Sep;9 pt 2(8).
Oshika, T. ; Nishiyama, A. ; Nakaso, Koichi ; Shimada, M. ; Okuyama, K. / Unveiling the magic of H2S on the CVD-Al2O3 coating. In: Journal De Physique. IV : JP. 1999 ; Vol. 9 pt 2, No. 8.
@article{36675165e7374c9998167c8e308a7112,
title = "Unveiling the magic of H2S on the CVD-Al2O3 coating",
abstract = "The role of H2S in the mechanism of CVD-Al2O3 coating was investigated by measuring particles suspended in the gas phase with an optical particle counter. H2S doping of the CVD-Al2O3 process improves the homogeneity of thickness and growth rate of the Al2O3 layer. The number of particles produced in the reactor whose size was larger than 200 nm was dramatically reduced by H2S doping. The effect of H2S doping appears to be a reduction of the size of Al2O3 particles present in the reactor. These smaller particles have a greater mobility, which will allow them to arrive at the surface, regardless of the shape or arrangement of the substrate inside the reactor.",
author = "T. Oshika and A. Nishiyama and Koichi Nakaso and M. Shimada and K. Okuyama",
year = "1999",
month = "9",
language = "English",
volume = "9 pt 2",
journal = "European Physical Journal: Special Topics",
issn = "1951-6355",
publisher = "Springer Verlag",
number = "8",

}

TY - JOUR

T1 - Unveiling the magic of H2S on the CVD-Al2O3 coating

AU - Oshika, T.

AU - Nishiyama, A.

AU - Nakaso, Koichi

AU - Shimada, M.

AU - Okuyama, K.

PY - 1999/9

Y1 - 1999/9

N2 - The role of H2S in the mechanism of CVD-Al2O3 coating was investigated by measuring particles suspended in the gas phase with an optical particle counter. H2S doping of the CVD-Al2O3 process improves the homogeneity of thickness and growth rate of the Al2O3 layer. The number of particles produced in the reactor whose size was larger than 200 nm was dramatically reduced by H2S doping. The effect of H2S doping appears to be a reduction of the size of Al2O3 particles present in the reactor. These smaller particles have a greater mobility, which will allow them to arrive at the surface, regardless of the shape or arrangement of the substrate inside the reactor.

AB - The role of H2S in the mechanism of CVD-Al2O3 coating was investigated by measuring particles suspended in the gas phase with an optical particle counter. H2S doping of the CVD-Al2O3 process improves the homogeneity of thickness and growth rate of the Al2O3 layer. The number of particles produced in the reactor whose size was larger than 200 nm was dramatically reduced by H2S doping. The effect of H2S doping appears to be a reduction of the size of Al2O3 particles present in the reactor. These smaller particles have a greater mobility, which will allow them to arrive at the surface, regardless of the shape or arrangement of the substrate inside the reactor.

UR - http://www.scopus.com/inward/record.url?scp=0033188084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033188084&partnerID=8YFLogxK

M3 - Article

VL - 9 pt 2

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

IS - 8

ER -