The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 2002|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics