Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy

T. Higuchi, S. Nozawa, T. Tsukamoto, H. Ishii, Ritsuko Eguchi, Y. Tezuka, S. Yamaguchi, K. Kanai, S. Shin

Research output: Contribution to journalArticle

Abstract

The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number15
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

Fingerprint

Surface states
Photoelectron spectroscopy
Electronic structure
photoelectric emission
electronic structure
Fermi level
spectroscopy
Absorption spectra
X rays
x ray spectra
x ray absorption
absorption spectra

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy. / Higuchi, T.; Nozawa, S.; Tsukamoto, T.; Ishii, H.; Eguchi, Ritsuko; Tezuka, Y.; Yamaguchi, S.; Kanai, K.; Shin, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 15, 01.01.2002, p. 1-4.

Research output: Contribution to journalArticle

Higuchi, T. ; Nozawa, S. ; Tsukamoto, T. ; Ishii, H. ; Eguchi, Ritsuko ; Tezuka, Y. ; Yamaguchi, S. ; Kanai, K. ; Shin, S. / Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 15. pp. 1-4.
@article{deb0be9a30894b538ebc53cefa3bc800,
title = "Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy",
abstract = "The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).",
author = "T. Higuchi and S. Nozawa and T. Tsukamoto and H. Ishii and Ritsuko Eguchi and Y. Tezuka and S. Yamaguchi and K. Kanai and S. Shin",
year = "2002",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.66.153105",
language = "English",
volume = "66",
pages = "1--4",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "15",

}

TY - JOUR

T1 - Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy

AU - Higuchi, T.

AU - Nozawa, S.

AU - Tsukamoto, T.

AU - Ishii, H.

AU - Eguchi, Ritsuko

AU - Tezuka, Y.

AU - Yamaguchi, S.

AU - Kanai, K.

AU - Shin, S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).

AB - The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).

UR - http://www.scopus.com/inward/record.url?scp=85038298684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038298684&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.66.153105

DO - 10.1103/PhysRevB.66.153105

M3 - Article

AN - SCOPUS:85038298684

VL - 66

SP - 1

EP - 4

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

ER -