Unoccupied electronic structure in the surface state of lightly doped (formula presented) by resonant inverse photoemission spectroscopy

T. Higuchi, S. Nozawa, T. Tsukamoto, H. Ishii, Ritsuko Eguchi, Y. Tezuka, S. Yamaguchi, K. Kanai, S. Shin

Research output: Contribution to journalArticle

Abstract

The unoccupied electronic structure in the surface state of lightly doped (formula presented) has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the (formula presented) and (formula presented) subbands of unoccupied Ti (formula presented) state. A peak clarified by the Ti (formula presented) resonance effect is observed at 6.1 eV above Fermi level (formula presented) The 6.1 eV peak is not found in the O (formula presented) x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the 6.1 eV peak suggests the correlation effect in the surface state of lightly doped (formula presented).

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number15
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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