Unoccupied electronic structure in the surface state of lightly doped SrTiO3 by resonant inverse photoemission spectroscopy

T. Higuchi, S. Nozawa, T. Tsukamoto, H. Ishii, R. Eguchi, Y. Tezukan, S. Yamaguchi, K. Kanai, S. Shin

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Abstract

The unoccupied electronic structure in the surface state of lightly doped SrTiO3 has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the t2g and eg subbands of unoccupied Ti 3d state. A peak clarified by the Ti 3p → 3d resonance effect is observed at -6.1 eV above Fermi level (EF). The -6.1 eV peak is not found in the O 1 s x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the -6.1 eV peak suggests the correlation effect in the surface state of lightly doped SrTiO3.

Original languageEnglish
Article number153105
Pages (from-to)1531051-1531054
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number15
Publication statusPublished - Oct 15 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Higuchi, T., Nozawa, S., Tsukamoto, T., Ishii, H., Eguchi, R., Tezukan, Y., Yamaguchi, S., Kanai, K., & Shin, S. (2002). Unoccupied electronic structure in the surface state of lightly doped SrTiO3 by resonant inverse photoemission spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 66(15), 1531051-1531054. [153105].