Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states

K. Ishizaka, T. Kiss, T. Shimojima, T. Yokoya, T. Togashi, S. Watanabe, C. Q. Zhang, C. T. Chen, Y. Onose, Y. Tokura, S. Shin

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Abstract

The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (∼60meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.

Original languageEnglish
Article number233202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number23
DOIs
Publication statusPublished - Dec 15 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ishizaka, K., Kiss, T., Shimojima, T., Yokoya, T., Togashi, T., Watanabe, S., Zhang, C. Q., Chen, C. T., Onose, Y., Tokura, Y., & Shin, S. (2005). Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states. Physical Review B - Condensed Matter and Materials Physics, 72(23), [233202]. https://doi.org/10.1103/PhysRevB.72.233202