Ultrathin-film hydrogen gas sensor with nanostructurally modified surface

Research output: Contribution to journalArticle

Abstract

The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.

Original languageEnglish
Article number076701
Pages (from-to)76701
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume53
Issue number7
DOIs
Publication statusPublished - 2014

Fingerprint

Ultrathin films
Chemical sensors
Glass
Hydrogen
glass
sensors
hydrogen
gases
Substrates
Acoustic impedance
room temperature
electrical resistance
Gases
adhesives
Film thickness
Adhesives
film thickness
recovery
injection
Heating

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Ultrathin-film hydrogen gas sensor with nanostructurally modified surface",
abstract = "The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.",
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T1 - Ultrathin-film hydrogen gas sensor with nanostructurally modified surface

AU - Tsukada, Keiji

AU - Takeichi, Shuzo

AU - Sakai, Kenji

AU - Kiwa, Toshihiko

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N2 - The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.

AB - The change in electrical resistance of Pt thin films on glass substrates upon exposure to hydrogen gas at room temperature was studied. The effect was detectible only for film thicknesses of less than 40 nm, and increased with decreasing thickness. Samples were also produced with a Ti film inserted between the Pt film and the glass substrate as an adhesive layer. Although the Ti film did not react with the hydrogen gas, its presence reduced the resistance change effect because it acted as a parallel resistance. To overcome this problem, the surface of the glass substrate was nanostructurally modified using porous SiO2, which led to a larger resistance change ratio. To improve the recovery time, heating by pulsed current injection was carried out. A structure consisting of Pt (5nm)/Ti (3 nm)/porous SiO2/glass was found to show a clear response to hydrogen concentrations down to about 100 ppm at room temperature.

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