Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices

T. Miyadera, T. Kiwa, I. Kawayama, H. Murakami, M. Tonouchi

Research output: Contribution to journalArticle

Abstract

We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines.

Original languageEnglish
Pages (from-to)1602-1606
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume412-414
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Oct 1 2004
Externally publishedYes

Keywords

  • Amorphous Ge
  • Optical-to-electrical signal converter
  • Terahertz radiation
  • YBCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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