CdTe/CdZnTe is an attractive and consolidated material with which to realize detectors with good efficiency and energy resolution, operating at room temperature for a large variety of applications such as astrophysics, medical imaging and security. However, this type of material suffers from the low mobility of the charge carriers (particularly the holes), which are trapped and so degrade the detector response in terms of charge collection efficiency, energy resolution and photopeak efficiency. The response of a planar CdTe/CdZnTe detector, which depends on the distance between the charge formation position and the collecting electrodes, can be improved by using two kinds of techniques, based on the optimization of the electrode geometry and/or signal compensation methods. We are studying the feasibility and the reliability of a biparametric method that uses a twin pulse shaping active filter to analyze each signal from the detector twice: one 'Slow', which is proportional to the energy of the incident photon, and one 'Fast', which depends on the position of the interaction with respect to the collecting electrode. In this paper we describe the bi-parametric technique applied to planar CdZnTe detectors grown by CNR/IMEM and to Spectrometer Grade detectors. We report the experimental results in terms of energy resolution, peak-to valley ratio and photopeak efficiency, as well as the compensated spectra obtained as a function of the bias voltage, photon energy and shaping time pairs. We also report the results obtained by using a CdZnTe drift strip detector. Furthermore, this technique could be implemented in an array of detectors, whose front-end electronics is composed of ASICs, where the shaping time can be selected for each channel, like the RENA-3 IC (NOVA RD).