Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of ∼1 MHz and a phase shift of π, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

Original languageEnglish
Pages (from-to)L1109-L1111
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number10 A
Publication statusPublished - Oct 1 2003

Keywords

  • Current standard
  • Nanotechnology
  • Single-electron transistor
  • Single-electron turnstile
  • Sllicon-on-insulator

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Ono, Y., Zimmerman, N. M., Yamazaki, K., & Takahashi, Y. (2003). Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor. Japanese Journal of Applied Physics, Part 2: Letters, 42(10 A), L1109-L1111.