Tunneling spectra of break junctions involving Nb 3Sn

Toshikazu Ekino, Akira Sugimoto, Yuta Sakai, Alexander M. Gabovich, Jun Akimitsu

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Abstract

The electronic gap structure of Nb3Sn was measured by the break-junction (BJ) tunneling technique. The superconducting gap values are estimated to be in the range 2{increment} = 4-5.5 meV at T = 4.2 K as follows from the observed distinct conductance peaks. In addition to the superconducting gap structure, we observed reproducible hump-like structures at the biases of about ±20 and ±50 mV. Such a coexistence of gap and hump structures resembles the situation found in the high-Tc copper-oxide superconductors. Above the superconducting critical temperature Tc ~ 18 K, the humps appear as the only gap-like structures. Their possible origin is discussed in connection to the structural phase transition occurring in Nb3Sn.

Original languageEnglish
Article number1.4897415
JournalLow Temperature Physics
Volume40
Issue number10
DOIs
Publication statusPublished - Oct 1 2014
Externally publishedYes

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copper oxides
critical temperature
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ekino, T., Sugimoto, A., Sakai, Y., Gabovich, A. M., & Akimitsu, J. (2014). Tunneling spectra of break junctions involving Nb 3Sn. Low Temperature Physics, 40(10), [1.4897415]. https://doi.org/10.1063/1.4897415

Tunneling spectra of break junctions involving Nb 3Sn. / Ekino, Toshikazu; Sugimoto, Akira; Sakai, Yuta; Gabovich, Alexander M.; Akimitsu, Jun.

In: Low Temperature Physics, Vol. 40, No. 10, 1.4897415, 01.10.2014.

Research output: Contribution to journalArticle

Ekino, T, Sugimoto, A, Sakai, Y, Gabovich, AM & Akimitsu, J 2014, 'Tunneling spectra of break junctions involving Nb 3Sn', Low Temperature Physics, vol. 40, no. 10, 1.4897415. https://doi.org/10.1063/1.4897415
Ekino, Toshikazu ; Sugimoto, Akira ; Sakai, Yuta ; Gabovich, Alexander M. ; Akimitsu, Jun. / Tunneling spectra of break junctions involving Nb 3Sn. In: Low Temperature Physics. 2014 ; Vol. 40, No. 10.
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