Abstract
Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.
| Original language | English |
|---|---|
| Pages (from-to) | 2689-2691 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 53 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3. / Takada, J.; Terashima, T.; Bando, Y.; Mazaki, H.; Iijima, K.; Yamamoto, K.; Hirata, K.
In: Applied Physics Letters, Vol. 53, No. 26, 1988, p. 2689-2691.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3
AU - Takada, J.
AU - Terashima, T.
AU - Bando, Y.
AU - Mazaki, H.
AU - Iijima, K.
AU - Yamamoto, K.
AU - Hirata, K.
PY - 1988
Y1 - 1988
N2 - Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.
AB - Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.
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U2 - 10.1063/1.100546
DO - 10.1063/1.100546
M3 - Article
VL - 53
SP - 2689
EP - 2691
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
ER -