Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3

J. Takada; T. Terashima; Y. Bando; H. Mazaki; K. Iijima; K. Yamamoto; K. Hirata

doi:10.1063/1.100546

Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO₃

J. Takada, T. Terashima, Y. Bando, H. Mazaki, K. Iijima, K. Yamamoto, K. Hirata

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa₂Cu₃O_7-x (YBCO) or ErBa ₂Cu₃O_7-x. These were epitaxially grown on single-crystal SrTiO₃ by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO₃ (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO₃ (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.

Original language	English
Pages (from-to)	2689-2691
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	26
DOIs	https://doi.org/10.1063/1.100546
Publication status	Published - Dec 1 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3",

abstract = "Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.",

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T1 - Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3

AU - Takada, J.

AU - Terashima, T.

AU - Bando, Y.

AU - Mazaki, H.

AU - Iijima, K.

AU - Yamamoto, K.

AU - Hirata, K.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.

AB - Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7-x (YBCO) or ErBa 2Cu3O7-x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.

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