Trap states and transport characteristics in picene thin film field-effect transistor

Naoko Kawasaki, Yoshihiro Kubozono, Hideki Okamoto, Akihiko Fujiwara, Minoru Yamaji

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

Original languageEnglish
Article number043310
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009

Fingerprint

field effect transistors
traps
thin films
atmospheres

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Trap states and transport characteristics in picene thin film field-effect transistor. / Kawasaki, Naoko; Kubozono, Yoshihiro; Okamoto, Hideki; Fujiwara, Akihiko; Yamaji, Minoru.

In: Applied Physics Letters, Vol. 94, No. 4, 043310, 2009.

Research output: Contribution to journalArticle

@article{16e5ca9041b3460a82fd28f047b8d80c,
title = "Trap states and transport characteristics in picene thin film field-effect transistor",
abstract = "Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.",
author = "Naoko Kawasaki and Yoshihiro Kubozono and Hideki Okamoto and Akihiko Fujiwara and Minoru Yamaji",
year = "2009",
doi = "10.1063/1.3076124",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Trap states and transport characteristics in picene thin film field-effect transistor

AU - Kawasaki, Naoko

AU - Kubozono, Yoshihiro

AU - Okamoto, Hideki

AU - Fujiwara, Akihiko

AU - Yamaji, Minoru

PY - 2009

Y1 - 2009

N2 - Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

AB - Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

UR - http://www.scopus.com/inward/record.url?scp=59349117570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59349117570&partnerID=8YFLogxK

U2 - 10.1063/1.3076124

DO - 10.1063/1.3076124

M3 - Article

AN - SCOPUS:59349117570

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043310

ER -