Trap states and transport characteristics in picene thin film field-effect transistor

Naoko Kawasaki, Yoshihiro Kubozono, Hideki Okamoto, Akihiko Fujiwara, Minoru Yamaji

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O2 -exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O2 -exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm2 V -1 s-1 is realized under 500 Torr of O2.

Original languageEnglish
Article number043310
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - Feb 9 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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