The C76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μn, of 3.9 × 10-4 cm2 V-1 s-1, and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry