Transport properties of field-effect transistors with thin films of C76 and its electronic structure

Hiroyuki Sugiyama, Takayuki Nagano, Ryo Nouchi, Naoko Kawasaki, Yohei Ohta, Kumiko Imai, Michiko Tsutsui, Yoshihiro Kubozono, Akihiko Fujiwara

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    The C76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μn, of 3.9 × 10-4 cm2 V-1 s-1, and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.

    Original languageEnglish
    Pages (from-to)160-164
    Number of pages5
    JournalChemical Physics Letters
    Issue number1-3
    Publication statusPublished - Nov 26 2007

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physical and Theoretical Chemistry


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