Transport properties of field-effect transistors with thin films of C76 and its electronic structure

Hiroyuki Sugiyama, Takayuki Nagano, Ryo Nouchi, Naoko Kawasaki, Yohei Ohta, Kumiko Imai, Michiko Tsutsui, Yoshihiro Kubozono, Akihiko Fujiwara

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10 Citations (Scopus)

Abstract

The C76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μn, of 3.9 × 10-4 cm2 V-1 s-1, and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.

Original languageEnglish
Pages (from-to)160-164
Number of pages5
JournalChemical Physics Letters
Volume449
Issue number1-3
DOIs
Publication statusPublished - Nov 26 2007

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Sugiyama, H., Nagano, T., Nouchi, R., Kawasaki, N., Ohta, Y., Imai, K., Tsutsui, M., Kubozono, Y., & Fujiwara, A. (2007). Transport properties of field-effect transistors with thin films of C76 and its electronic structure. Chemical Physics Letters, 449(1-3), 160-164. https://doi.org/10.1016/j.cplett.2007.10.012