Transport properties of field-effect transistors with thin films of C76 and its electronic structure

Hiroyuki Sugiyama, Takayuki Nagano, Ryo Nouchi, Naoko Kawasaki, Yohei Ohta, Kumiko Imai, Michiko Tsutsui, Yoshihiro Kubozono, Akihiko Fujiwara

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The C76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μn, of 3.9 × 10-4 cm2 V-1 s-1, and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.

Original languageEnglish
Pages (from-to)160-164
Number of pages5
JournalChemical Physics Letters
Issue number1-3
Publication statusPublished - Nov 26 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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