Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

Naoko Kawasaki, Takayuki Nagano, Yoshihiro Kubozono, Yuuki Sako, Yu Morimoto, Yutaka Takaguchi, Akihiko Fujiwara, Chih Chien Chu, Toyoko Imae

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25 Citations (Scopus)

Abstract

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Original languageEnglish
Article number243515
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
Publication statusPublished - Dec 20 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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