Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)