Abstract
Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.
| Original language | English |
|---|---|
| Article number | 243515 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels. / Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih Chien; Imae, Toyoko.
In: Applied Physics Letters, Vol. 91, No. 24, 243515, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels
AU - Kawasaki, Naoko
AU - Nagano, Takayuki
AU - Kubozono, Yoshihiro
AU - Sako, Yuuki
AU - Morimoto, Yu
AU - Takaguchi, Yutaka
AU - Fujiwara, Akihiko
AU - Chu, Chih Chien
AU - Imae, Toyoko
PY - 2007
Y1 - 2007
N2 - Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.
AB - Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.
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U2 - 10.1063/1.2824818
DO - 10.1063/1.2824818
M3 - Article
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 243515
ER -