Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

Naoko Kawasaki; Takayuki Nagano; Yoshihiro Kubozono; Yuuki Sako; Yu Morimoto; Yutaka Takaguchi; Akihiko Fujiwara; Chih Chien Chu; Toyoko Imae

doi:10.1063/1.2824818

Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

Naoko Kawasaki, Takayuki Nagano, Yoshihiro Kubozono, Yuuki Sako, Yu Morimoto, Yutaka Takaguchi, Akihiko Fujiwara, Chih Chien Chu, Toyoko Imae

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Original language	English
Article number	243515
Journal	Applied Physics Letters
Volume	91
Issue number	24
DOIs	https://doi.org/10.1063/1.2824818
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2824818

Cite this

@article{ea77773563df463c850753aa5d820b36,

title = "Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels",

abstract = "Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.",

author = "Naoko Kawasaki and Takayuki Nagano and Yoshihiro Kubozono and Yuuki Sako and Yu Morimoto and Yutaka Takaguchi and Akihiko Fujiwara and Chu, {Chih Chien} and Toyoko Imae",

note = "Funding Information: The authors are grateful to Mr. Yohei Ohta and Mrs. Michie Sasaki for their kind assistance through this work. This work was partly supported by NEDO and by a Grant-in-Aid (No. 18340104) from MEXT, Japan.",

year = "2007",

doi = "10.1063/1.2824818",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

AU - Kawasaki, Naoko

AU - Nagano, Takayuki

AU - Kubozono, Yoshihiro

AU - Sako, Yuuki

AU - Morimoto, Yu

AU - Takaguchi, Yutaka

AU - Fujiwara, Akihiko

AU - Chu, Chih Chien

AU - Imae, Toyoko

N1 - Funding Information: The authors are grateful to Mr. Yohei Ohta and Mrs. Michie Sasaki for their kind assistance through this work. This work was partly supported by NEDO and by a Grant-in-Aid (No. 18340104) from MEXT, Japan.

PY - 2007

Y1 - 2007

N2 - Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

AB - Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n -channel normally off characteristics with the field-effect mobility of 2.7× 10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4× 10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π -conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

UR - http://www.scopus.com/inward/record.url?scp=37149054643&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37149054643&partnerID=8YFLogxK

U2 - 10.1063/1.2824818

DO - 10.1063/1.2824818

M3 - Article

AN - SCOPUS:37149054643

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243515

ER -

Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this