Transport properties in C60 field-effect transistor with a single Schottky barrier

Yohei Ohta; Yoshihiro Kubozono; Akihiko Fujiwara

doi:10.1063/1.2919799

Transport properties in C₆₀ field-effect transistor with a single Schottky barrier

Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

Original language	English
Article number	173306
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2919799
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2919799

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title = "Transport properties in C60 field-effect transistor with a single Schottky barrier",

abstract = "C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.",

author = "Yohei Ohta and Yoshihiro Kubozono and Akihiko Fujiwara",

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AU - Ohta, Yohei

AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

N1 - Funding Information: This work was partly supported by a Grant-in-Aid (No. 18340104) from MEXT, Japan.

PY - 2008

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N2 - C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

AB - C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

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Transport properties in C₆₀ field-effect transistor with a single Schottky barrier

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