Transport properties in C60 field-effect transistor with a single Schottky barrier

Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

Original languageEnglish
Article number173306
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
Publication statusPublished - 2008

Fingerprint

field effect transistors
transport properties
carrier injection
thermionic emission
Schottky diodes
quantitative analysis
insertion
retarding
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Transport properties in C60 field-effect transistor with a single Schottky barrier. / Ohta, Yohei; Kubozono, Yoshihiro; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 92, No. 17, 173306, 2008.

Research output: Contribution to journalArticle

@article{09e9f4e0f496450891370f0ded1f22d4,
title = "Transport properties in C60 field-effect transistor with a single Schottky barrier",
abstract = "C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.",
author = "Yohei Ohta and Yoshihiro Kubozono and Akihiko Fujiwara",
year = "2008",
doi = "10.1063/1.2919799",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Transport properties in C60 field-effect transistor with a single Schottky barrier

AU - Ohta, Yohei

AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

PY - 2008

Y1 - 2008

N2 - C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

AB - C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

UR - http://www.scopus.com/inward/record.url?scp=43049088786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049088786&partnerID=8YFLogxK

U2 - 10.1063/1.2919799

DO - 10.1063/1.2919799

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 173306

ER -