Transport properties in C60 field-effect transistor with a single Schottky barrier

Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

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Abstract

C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

Original languageEnglish
Article number173306
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
Publication statusPublished - 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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