Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE)

Yuya Asanuma; Hiroki Mori; Yasushi Nishihara

doi:10.1246/cl.190304

Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE)

Yuya Asanuma, Hiroki Mori, Yasushi Nishihara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article

Abstract

Transistor properties of two semiconducting polymers based on vinylene-bridged 5,6-difluorobenzo[c][1,2,5]thiadiazole (4T and 2TTT) and their structure-property relationship were investigated. Grazing incidence wide-angle X-ray scattering (GIWAXS) measurements revealed that both polymers formed an ordered edge-on orientation, but 4T has a higher crystallinity than 2TTT. As a result, the fabricated 4T-based organic field-effect transistor (OFET) exhibited a higher hole mobility of up to 0.079 cm² V¹¹ s¹¹ than 2TTT-based OFET.

Original language	English
Pages (from-to)	1029-1031
Number of pages	3
Journal	Chemistry Letters
Volume	48
Issue number	9
DOIs	https://doi.org/10.1246/cl.190304
Publication status	Published - Jan 1 2019

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Keywords

Organic field-effect transistors
Semiconducting polymers
Thiadiazole

ASJC Scopus subject areas

Chemistry(all)

Cite this

Asanuma, Y., Mori, H., & Nishihara, Y. (2019). Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE). Chemistry Letters, 48(9), 1029-1031. https://doi.org/10.1246/cl.190304

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10.1246/cl.190304