Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE)

Research output: Contribution to journalArticle

Abstract

Transistor properties of two semiconducting polymers based on vinylene-bridged 5,6-difluorobenzo[c][1,2,5]thiadiazole (4T and 2TTT) and their structure-property relationship were investigated. Grazing incidence wide-angle X-ray scattering (GIWAXS) measurements revealed that both polymers formed an ordered edge-on orientation, but 4T has a higher crystallinity than 2TTT. As a result, the fabricated 4T-based organic field-effect transistor (OFET) exhibited a higher hole mobility of up to 0.079 cm2 V11 s11 than 2TTT-based OFET.

Original languageEnglish
Pages (from-to)1029-1031
Number of pages3
JournalChemistry Letters
Volume48
Issue number9
DOIs
Publication statusPublished - Jan 1 2019

Fingerprint

Thiadiazoles
Semiconducting polymers
Organic field effect transistors
Transistors
Hole mobility
X ray scattering
Polymers

Keywords

  • Organic field-effect transistors
  • Semiconducting polymers
  • Thiadiazole

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE). / Asanuma, Yuya; Mori, Hiroki; Nishihara, Yasushi.

In: Chemistry Letters, Vol. 48, No. 9, 01.01.2019, p. 1029-1031.

Research output: Contribution to journalArticle

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