Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE)

Yuya Asanuma, Hiroki Mori, Yasushi Nishihara

Research output: Contribution to journal › Article › peer-review

Abstract

Transistor properties of two semiconducting polymers based on vinylene-bridged 5,6-difluorobenzo[c][1,2,5]thiadiazole (4T and 2TTT) and their structure-property relationship were investigated. Grazing incidence wide-angle X-ray scattering (GIWAXS) measurements revealed that both polymers formed an ordered edge-on orientation, but 4T has a higher crystallinity than 2TTT. As a result, the fabricated 4T-based organic field-effect transistor (OFET) exhibited a higher hole mobility of up to 0.079 cm2 V11 s11 than 2TTT-based OFET.

Original languageEnglish
Pages (from-to)1029-1031
Number of pages3
JournalChemistry Letters
Volume48
Issue number9
DOIs
Publication statusPublished - Jan 1 2019

Keywords

  • Organic field-effect transistors
  • Semiconducting polymers
  • Thiadiazole

ASJC Scopus subject areas

  • Chemistry(all)

Access to Document

Fingerprint Dive into the research topics of 'Transistor properties of semiconducting polymers based on vinylene-bridged difluorobenzo[c][1,2,5]thiadiazole (FBTzE)'. Together they form a unique fingerprint.

Cite this