Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b: 8,7-b′]dithiophenes

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Abstract

Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophene derivatives (Cn-PDTs). The FET characteristics of Cn-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, μ, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b′]dithiophene (C12-PDT) thin-film FET displays superior properties, with μs as high as 1.8 cm2 V-1 s-1 for the SiO2 gate dielectric and 2.2 cm2 V-1 s-1 for the HfO2 gate dielectric. The average μ values, 〈μ〉, reach 1.1(5) and 1.8(6) cm2 V-1 s-1, respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage 〈Vth〉 of ∼11 V, was implemented, together with the above high 〈μ〉 of ∼2 cm2 V-1 s-1. Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C12-PDT molecule for application in a high-performance transistor.

Original languageEnglish
Pages (from-to)2413-2421
Number of pages9
JournalJournal of Materials Chemistry C
Volume3
Issue number10
DOIs
Publication statusPublished - Mar 14 2015

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Gate dielectrics
Field effect transistors
Transistors
Molecules
Thin film transistors
Threshold voltage
picene
Carbon
Derivatives
Thin films
Atoms
1-phenyl-3,3-dimethyltriazene
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

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title = "Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b: 8,7-b′]dithiophenes",
abstract = "Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophene derivatives (Cn-PDTs). The FET characteristics of Cn-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, μ, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b′]dithiophene (C12-PDT) thin-film FET displays superior properties, with μs as high as 1.8 cm2 V-1 s-1 for the SiO2 gate dielectric and 2.2 cm2 V-1 s-1 for the HfO2 gate dielectric. The average μ values, 〈μ〉, reach 1.1(5) and 1.8(6) cm2 V-1 s-1, respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage 〈Vth〉 of ∼11 V, was implemented, together with the above high 〈μ〉 of ∼2 cm2 V-1 s-1. Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C12-PDT molecule for application in a high-performance transistor.",
author = "Yoshihiro Kubozono and Keita Hyodo and Hiroki Mori and Shino Hamao and Hidenori Goto and Yasushi Nishihara",
year = "2015",
month = "3",
day = "14",
doi = "10.1039/c4tc02413c",
language = "English",
volume = "3",
pages = "2413--2421",
journal = "Journal of Materials Chemistry C",
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publisher = "Royal Society of Chemistry",
number = "10",

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TY - JOUR

T1 - Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b

T2 - 8,7-b′]dithiophenes

AU - Kubozono, Yoshihiro

AU - Hyodo, Keita

AU - Mori, Hiroki

AU - Hamao, Shino

AU - Goto, Hidenori

AU - Nishihara, Yasushi

PY - 2015/3/14

Y1 - 2015/3/14

N2 - Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophene derivatives (Cn-PDTs). The FET characteristics of Cn-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, μ, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b′]dithiophene (C12-PDT) thin-film FET displays superior properties, with μs as high as 1.8 cm2 V-1 s-1 for the SiO2 gate dielectric and 2.2 cm2 V-1 s-1 for the HfO2 gate dielectric. The average μ values, 〈μ〉, reach 1.1(5) and 1.8(6) cm2 V-1 s-1, respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage 〈Vth〉 of ∼11 V, was implemented, together with the above high 〈μ〉 of ∼2 cm2 V-1 s-1. Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C12-PDT molecule for application in a high-performance transistor.

AB - Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophene derivatives (Cn-PDTs). The FET characteristics of Cn-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, μ, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b′]dithiophene (C12-PDT) thin-film FET displays superior properties, with μs as high as 1.8 cm2 V-1 s-1 for the SiO2 gate dielectric and 2.2 cm2 V-1 s-1 for the HfO2 gate dielectric. The average μ values, 〈μ〉, reach 1.1(5) and 1.8(6) cm2 V-1 s-1, respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage 〈Vth〉 of ∼11 V, was implemented, together with the above high 〈μ〉 of ∼2 cm2 V-1 s-1. Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C12-PDT molecule for application in a high-performance transistor.

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U2 - 10.1039/c4tc02413c

DO - 10.1039/c4tc02413c

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JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

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