Transistor application of alkyl-substituted picene

Hideki Okamoto, Shino Hamao, Hidenori Goto, Yusuke Sakai, Masanari Izumi, Shin Gohda, Yoshihiro Kubozono, Ritsuko Eguchi

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C 14 H 29) 2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility,1/4, in a picene-(C 14 H 29) 2 thin-film FET with PbZr 0.52 Ti 0.48 O 3 (PZT) gate dielectric reached ∼21¢ €...cm 2 V ¢ ̂'1 s ¢ ̂'1, which is the highest1/4 value recorded for organic thin-film FETs; the average1/4 value (< 1/4>) evaluated from twelve FET devices was 14(4)¢ €...cm 2 V ¢ ̂'1 s ¢ ̂'1. The < 1/4> values for picene-(C 14 H 29) 2 thin-film FETs with other gate dielectrics such as SiO 2, Ta 2 O 5, ZrO 2 and HfO 2 were greater than 5¢ €...cm 2 V ¢ ̂'1 s ¢ ̂'1, and the lowest absolute threshold voltage, |V th |, (5.2¢ €...V) was recorded with a PZT gate dielectric; the average |V th | for PZT gate dielectric is 7(1)¢ €...V. The solution-processed picene-(C 14 H 29) 2 FET was also fabricated with an SiO 2 gate dielectric, yielding1/4 = 3.4 × 10 ¢ ̂'2 ¢ €...cm 2 V ¢ ̂'1 s ¢ ̂'1. These results verify the effectiveness of picene-(C 14 H 29) 2 for electronics applications.

Original languageEnglish
Article number5048
JournalScientific reports
Volume4
DOIs
Publication statusPublished - May 23 2014

ASJC Scopus subject areas

  • General

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