TY - GEN
T1 - Total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array VLSI during operation
AU - Ito, Hirotoshi
AU - Watanabe, Minoru
N1 - Funding Information:
This research was partly supported by the Initiatives for Atomic Energy Basic and Generic Strategic Research No. JPJA19F19209710. The VLSI chip in this study was fabricated in the chip fabrication program of VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Rohm Co. Ltd. and Toppan Printing Co. Ltd.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - This paper presents the total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array (FPGA) during operation. The optoelectronic FPGA was fabricated using 0.18 µ m standard complementary metal oxide semiconductor (CMOS) process technology. An experiment assessing the total-ionizing-dose tolerance of the optoelectronic FPGA was conducted at a 2.27-2.28 kGy/h dose rate using a60 Co gamma radiation source. Results clarified that the optoelectronic FPGA can function correctly under a 2.27-2.28 kGy/h dose rate and that the total-ionizing-dose tolerance of the optoelectronic FPGA is greater than 80 Mrad during operation. The total-ionizing-dose tolerance result is 80 times higher than that of typical radiation-hardened very large scale integrated circuits (VLSIs) and typical radiation-hardened FPGAs.
AB - This paper presents the total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array (FPGA) during operation. The optoelectronic FPGA was fabricated using 0.18 µ m standard complementary metal oxide semiconductor (CMOS) process technology. An experiment assessing the total-ionizing-dose tolerance of the optoelectronic FPGA was conducted at a 2.27-2.28 kGy/h dose rate using a60 Co gamma radiation source. Results clarified that the optoelectronic FPGA can function correctly under a 2.27-2.28 kGy/h dose rate and that the total-ionizing-dose tolerance of the optoelectronic FPGA is greater than 80 Mrad during operation. The total-ionizing-dose tolerance result is 80 times higher than that of typical radiation-hardened very large scale integrated circuits (VLSIs) and typical radiation-hardened FPGAs.
KW - Field programmable gate arrays
KW - optical interconnections
KW - optoelectronic devices
KW - radiation
KW - total-ionizing-dose tolerance
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U2 - 10.1109/ICFPT52863.2021.9609910
DO - 10.1109/ICFPT52863.2021.9609910
M3 - Conference contribution
AN - SCOPUS:85123206060
T3 - 2021 International Conference on Field-Programmable Technology, ICFPT 2021
BT - 2021 International Conference on Field-Programmable Technology, ICFPT 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Field-Programmable Technology, ICFPT 2021
Y2 - 6 December 2021 through 10 December 2021
ER -