TY - GEN
T1 - Total dose effects on 0.15μm FD-SOI CMOS transistors
AU - Ikegami, Y.
AU - Arai, Y.
AU - Hara, K.
AU - Hazumi, M.
AU - Ikeda, H.
AU - Ishino, H.
AU - Kohriki, T.
AU - Miyake, H.
AU - Mochizuki, A.
AU - Terada, S.
AU - Tsuboyama, T.
AU - Unno, Y.
PY - 2007
Y1 - 2007
N2 - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.
AB - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.
UR - http://www.scopus.com/inward/record.url?scp=48349111338&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48349111338&partnerID=8YFLogxK
U2 - 10.1109/NSSMIC.2007.4436582
DO - 10.1109/NSSMIC.2007.4436582
M3 - Conference contribution
AN - SCOPUS:48349111338
SN - 1424409233
SN - 9781424409235
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 2173
EP - 2177
BT - 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
T2 - 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Y2 - 27 October 2007 through 3 November 2007
ER -