Total dose effects on 0.15μm FD-SOI CMOS transistors

Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.

Original languageEnglish
Title of host publication2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Pages2173-2177
Number of pages5
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States
Duration: Oct 27 2007Nov 3 2007

Publication series

NameIEEE Nuclear Science Symposium Conference Record
Volume3
ISSN (Print)1095-7863

Other

Other2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
CountryUnited States
CityHonolulu, HI
Period10/27/0711/3/07

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Ikegami, Y., Arai, Y., Hara, K., Hazumi, M., Ikeda, H., Ishino, H., Kohriki, T., Miyake, H., Mochizuki, A., Terada, S., Tsuboyama, T., & Unno, Y. (2007). Total dose effects on 0.15μm FD-SOI CMOS transistors. In 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC (pp. 2173-2177). [4436582] (IEEE Nuclear Science Symposium Conference Record; Vol. 3). https://doi.org/10.1109/NSSMIC.2007.4436582