Total dose effects on 0.15μm FD-SOI CMOS transistors

Y. Ikegami; Y. Arai; K. Hara; M. Hazumi; H. Ikeda; H. Ishino; T. Kohriki; H. Miyake; A. Mochizuki; S. Terada; T. Tsuboyama; Y. Unno

doi:10.1109/NSSMIC.2007.4436582

Total dose effects on 0.15μm FD-SOI CMOS transistors

Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×10¹³, 5.8×10¹⁴, and 5.5×10¹⁵ n_eq/cm ². In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.

Original language	English
Title of host publication	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Pages	2173-2177
Number of pages	5
DOIs	https://doi.org/10.1109/NSSMIC.2007.4436582
Publication status	Published - 2007
Externally published	Yes
Event	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States Duration: Oct 27 2007 → Nov 3 2007

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
Volume	3
ISSN (Print)	1095-7863

Other

Other	2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Country/Territory	United States
City	Honolulu, HI
Period	10/27/07 → 11/3/07

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

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10.1109/NSSMIC.2007.4436582

Cite this

Ikegami, Y., Arai, Y., Hara, K., Hazumi, M., Ikeda, H., Ishino, H., Kohriki, T., Miyake, H., Mochizuki, A., Terada, S., Tsuboyama, T., & Unno, Y. (2007). Total dose effects on 0.15μm FD-SOI CMOS transistors. In 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC (pp. 2173-2177). [4436582] (IEEE Nuclear Science Symposium Conference Record; Vol. 3). https://doi.org/10.1109/NSSMIC.2007.4436582

Total dose effects on 0.15μm FD-SOI CMOS transistors. / Ikegami, Y.; Arai, Y.; Hara, K.; Hazumi, M.; Ikeda, H.; Ishino, H.; Kohriki, T.; Miyake, H.; Mochizuki, A.; Terada, S.; Tsuboyama, T.; Unno, Y.

2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC. 2007. p. 2173-2177 4436582 (IEEE Nuclear Science Symposium Conference Record; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ikegami, Y, Arai, Y, Hara, K, Hazumi, M, Ikeda, H, Ishino, H, Kohriki, T, Miyake, H, Mochizuki, A, Terada, S, Tsuboyama, T & Unno, Y 2007, Total dose effects on 0.15μm FD-SOI CMOS transistors. in 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC., 4436582, IEEE Nuclear Science Symposium Conference Record, vol. 3, pp. 2173-2177, 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC, Honolulu, HI, United States, 10/27/07. https://doi.org/10.1109/NSSMIC.2007.4436582

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abstract = "The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.",

author = "Y. Ikegami and Y. Arai and K. Hara and M. Hazumi and H. Ikeda and H. Ishino and T. Kohriki and H. Miyake and A. Mochizuki and S. Terada and T. Tsuboyama and Y. Unno",

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AU - Ikegami, Y.

AU - Arai, Y.

AU - Hara, K.

AU - Hazumi, M.

AU - Ikeda, H.

AU - Ishino, H.

AU - Kohriki, T.

AU - Miyake, H.

AU - Mochizuki, A.

AU - Terada, S.

AU - Tsuboyama, T.

AU - Unno, Y.

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N2 - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.

AB - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.

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Total dose effects on 0.15μm FD-SOI CMOS transistors

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