Total dose effects on 0.15μm FD-SOI CMOS transistors

Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, Hirokazu Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology such as negligible latch-up probability, high speed and low power dissipation. The fully depleted SOI (FD-SOI) CMOS technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages. Although the total dose response of SOI devices is more complex due to the presence of the buried oxide, high radiation tolerance is expected for a very thin silicon layer. We investigated the total dose effects on transistors fabricated using the OKI 0.15μm FD-SOI CMOS process. Assuming a radiation environment at the super LHC experiment, we have irradiated with 70 MeV protons three chips each to 6.4×1013, 5.8×1014, and 5.5×1015 neq/cm 2. In this paper we report the latest results in comparison with the data taken in a 2006 exposure test.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium Conference Record
Pages2173-2177
Number of pages5
Volume3
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States
Duration: Oct 27 2007Nov 3 2007

Other

Other2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
CountryUnited States
CityHonolulu, HI
Period10/27/0711/3/07

Fingerprint

Transistors
Silicon
Electric industry
Radiation
Energy dissipation
Protons
Oxides
Experiments

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Ikegami, Y., Arai, Y., Hara, K., Hazumi, M., Ikeda, H., Ishino, H., ... Unno, Y. (2007). Total dose effects on 0.15μm FD-SOI CMOS transistors. In IEEE Nuclear Science Symposium Conference Record (Vol. 3, pp. 2173-2177). [4436582] https://doi.org/10.1109/NSSMIC.2007.4436582

Total dose effects on 0.15μm FD-SOI CMOS transistors. / Ikegami, Y.; Arai, Y.; Hara, K.; Hazumi, M.; Ikeda, H.; Ishino, Hirokazu; Kohriki, T.; Miyake, H.; Mochizuki, A.; Terada, S.; Tsuboyama, T.; Unno, Y.

IEEE Nuclear Science Symposium Conference Record. Vol. 3 2007. p. 2173-2177 4436582.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ikegami, Y, Arai, Y, Hara, K, Hazumi, M, Ikeda, H, Ishino, H, Kohriki, T, Miyake, H, Mochizuki, A, Terada, S, Tsuboyama, T & Unno, Y 2007, Total dose effects on 0.15μm FD-SOI CMOS transistors. in IEEE Nuclear Science Symposium Conference Record. vol. 3, 4436582, pp. 2173-2177, 2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC, Honolulu, HI, United States, 10/27/07. https://doi.org/10.1109/NSSMIC.2007.4436582
Ikegami Y, Arai Y, Hara K, Hazumi M, Ikeda H, Ishino H et al. Total dose effects on 0.15μm FD-SOI CMOS transistors. In IEEE Nuclear Science Symposium Conference Record. Vol. 3. 2007. p. 2173-2177. 4436582 https://doi.org/10.1109/NSSMIC.2007.4436582
Ikegami, Y. ; Arai, Y. ; Hara, K. ; Hazumi, M. ; Ikeda, H. ; Ishino, Hirokazu ; Kohriki, T. ; Miyake, H. ; Mochizuki, A. ; Terada, S. ; Tsuboyama, T. ; Unno, Y. / Total dose effects on 0.15μm FD-SOI CMOS transistors. IEEE Nuclear Science Symposium Conference Record. Vol. 3 2007. pp. 2173-2177
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