Time-Domain Terahertz Spectroscopy of (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 Substrate

Toshihiko Kiwa, Masayoshi Tonouchi

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Abstract

We measured terahertz (THz) properties of high-Tc superconductor’s (HTS’s) substrates, (100) MgO and (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT), at frequencies between 0.5 THz and 2 THz using time-domain terahertz spectroscopy (TDTS). The complex refractive index \tilde{n} and dielectric function \tildeɛ of the MgO substrate were independent of frequencies; those of LSAT slightly increased with increasing frequency. It was determined that \tilde{n}=3.17+i0.004 and \tildeɛ=10.1+i0.06 for the MgO substrate and \tilde{n}=4.8+i0.02 and \tildeɛ=24+i0.2 for the LSAT substrate at 1 THz. The LSAT values were almost independent of the temperature at these frequencies. The dielectric loss \tan δ’s of the LSAT and the MgO substrates were less than 0.01. The \tan δ’s of LSAT were several times larger than those of MgO, and increased with an increase of frequency.
Original languageEnglish
Pages (from-to)38
JournalJapanese Journal of Applied Physics
Volume40
DOIs
Publication statusPublished - Jan 1 2001

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spectroscopy
dielectric loss
refractivity
temperature

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Time-Domain Terahertz Spectroscopy of (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 Substrate. / Kiwa, Toshihiko; Tonouchi, Masayoshi.

In: Japanese Journal of Applied Physics, Vol. 40, 01.01.2001, p. 38.

Research output: Contribution to journalArticle

@article{c2e9e7a9512e43d6ad3fcd8376e9caeb,
title = "Time-Domain Terahertz Spectroscopy of (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 Substrate",
abstract = "We measured terahertz (THz) properties of high-Tc superconductor’s (HTS’s) substrates, (100) MgO and (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT), at frequencies between 0.5 THz and 2 THz using time-domain terahertz spectroscopy (TDTS). The complex refractive index \tilde{n} and dielectric function \tildeɛ of the MgO substrate were independent of frequencies; those of LSAT slightly increased with increasing frequency. It was determined that \tilde{n}=3.17+i0.004 and \tildeɛ=10.1+i0.06 for the MgO substrate and \tilde{n}=4.8+i0.02 and \tildeɛ=24+i0.2 for the LSAT substrate at 1 THz. The LSAT values were almost independent of the temperature at these frequencies. The dielectric loss \tan δ’s of the LSAT and the MgO substrates were less than 0.01. The \tan δ’s of LSAT were several times larger than those of MgO, and increased with an increase of frequency.",
author = "Toshihiko Kiwa and Masayoshi Tonouchi",
year = "2001",
month = "1",
day = "1",
doi = "10.1143/JJAP.40.L38",
language = "English",
volume = "40",
pages = "38",
journal = "Japanese Journal of Applied Physics",

}

TY - JOUR

T1 - Time-Domain Terahertz Spectroscopy of (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 Substrate

AU - Kiwa, Toshihiko

AU - Tonouchi, Masayoshi

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We measured terahertz (THz) properties of high-Tc superconductor’s (HTS’s) substrates, (100) MgO and (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT), at frequencies between 0.5 THz and 2 THz using time-domain terahertz spectroscopy (TDTS). The complex refractive index \tilde{n} and dielectric function \tildeɛ of the MgO substrate were independent of frequencies; those of LSAT slightly increased with increasing frequency. It was determined that \tilde{n}=3.17+i0.004 and \tildeɛ=10.1+i0.06 for the MgO substrate and \tilde{n}=4.8+i0.02 and \tildeɛ=24+i0.2 for the LSAT substrate at 1 THz. The LSAT values were almost independent of the temperature at these frequencies. The dielectric loss \tan δ’s of the LSAT and the MgO substrates were less than 0.01. The \tan δ’s of LSAT were several times larger than those of MgO, and increased with an increase of frequency.

AB - We measured terahertz (THz) properties of high-Tc superconductor’s (HTS’s) substrates, (100) MgO and (100) (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT), at frequencies between 0.5 THz and 2 THz using time-domain terahertz spectroscopy (TDTS). The complex refractive index \tilde{n} and dielectric function \tildeɛ of the MgO substrate were independent of frequencies; those of LSAT slightly increased with increasing frequency. It was determined that \tilde{n}=3.17+i0.004 and \tildeɛ=10.1+i0.06 for the MgO substrate and \tilde{n}=4.8+i0.02 and \tildeɛ=24+i0.2 for the LSAT substrate at 1 THz. The LSAT values were almost independent of the temperature at these frequencies. The dielectric loss \tan δ’s of the LSAT and the MgO substrates were less than 0.01. The \tan δ’s of LSAT were several times larger than those of MgO, and increased with an increase of frequency.

U2 - 10.1143/JJAP.40.L38

DO - 10.1143/JJAP.40.L38

M3 - Article

VL - 40

SP - 38

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -