Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification

Tomohiro Matsushita, Takayuki Muro, Kazuo Tsutsui, Takayoshi Yokoya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, X-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.

Original languageEnglish
Title of host publication19th International Workshop on Junction Technology, IWJT 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487277
DOIs
Publication statusPublished - Jun 1 2019
Event19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan
Duration: Jun 6 2019Jun 7 2019

Publication series

Name19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference19th International Workshop on Junction Technology, IWJT 2019
CountryJapan
CityKyoto
Period6/6/196/7/19

Fingerprint

Holography
Photoelectrons
Doping (additives)
Semiconductor materials
Imaging techniques
Crystals
Holograms
Semiconductor devices
Image reconstruction
Neutrons
Fluorescence
X rays
Networks (circuits)

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Matsushita, T., Muro, T., Tsutsui, K., & Yokoya, T. (2019). Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification. In 19th International Workshop on Junction Technology, IWJT 2019 [8802898] (19th International Workshop on Junction Technology, IWJT 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2019.8802898

Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification. / Matsushita, Tomohiro; Muro, Takayuki; Tsutsui, Kazuo; Yokoya, Takayoshi.

19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8802898 (19th International Workshop on Junction Technology, IWJT 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsushita, T, Muro, T, Tsutsui, K & Yokoya, T 2019, Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification. in 19th International Workshop on Junction Technology, IWJT 2019., 8802898, 19th International Workshop on Junction Technology, IWJT 2019, Institute of Electrical and Electronics Engineers Inc., 19th International Workshop on Junction Technology, IWJT 2019, Kyoto, Japan, 6/6/19. https://doi.org/10.23919/IWJT.2019.8802898
Matsushita T, Muro T, Tsutsui K, Yokoya T. Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification. In 19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8802898. (19th International Workshop on Junction Technology, IWJT 2019). https://doi.org/10.23919/IWJT.2019.8802898
Matsushita, Tomohiro ; Muro, Takayuki ; Tsutsui, Kazuo ; Yokoya, Takayoshi. / Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification. 19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (19th International Workshop on Junction Technology, IWJT 2019).
@inproceedings{6fdc0dacdf3b48e4b7a8f3a2d0857928,
title = "Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification",
abstract = "Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, X-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.",
author = "Tomohiro Matsushita and Takayuki Muro and Kazuo Tsutsui and Takayoshi Yokoya",
year = "2019",
month = "6",
day = "1",
doi = "10.23919/IWJT.2019.8802898",
language = "English",
series = "19th International Workshop on Junction Technology, IWJT 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "19th International Workshop on Junction Technology, IWJT 2019",

}

TY - GEN

T1 - Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification

AU - Matsushita, Tomohiro

AU - Muro, Takayuki

AU - Tsutsui, Kazuo

AU - Yokoya, Takayoshi

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, X-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.

AB - Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, X-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.

UR - http://www.scopus.com/inward/record.url?scp=85072082702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072082702&partnerID=8YFLogxK

U2 - 10.23919/IWJT.2019.8802898

DO - 10.23919/IWJT.2019.8802898

M3 - Conference contribution

T3 - 19th International Workshop on Junction Technology, IWJT 2019

BT - 19th International Workshop on Junction Technology, IWJT 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -