Three-dimensional alignment with 10 nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication

Kenji Yamazaki, Hiroshi Yamaguchi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Three-dimensional (3D) alignment with 10 nm order accuracy in 3D electron-beam (EB) lithography has been achieved by means of highly accurate rotation control and mark location using the transmission electron signal. Accurately aligned EB writing from various directions on micron order resists blocks on a small substrate provides great structural flexibility in the creation of 3D nanostructures. As a demonstration of the accuracy, a 3D hydrogen silsesquioxane nanostructure was made by 3D EB writing and two-step development using different developers. Moreover, a 3D poly(methyl methacrylate) nanostructure was made by repeated 3D EB writing and development to demonstrate 3D nanofabrication with great structural flexibility.

Original languageEnglish
Pages (from-to)2529-2533
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number6
DOIs
Publication statusPublished - Dec 11 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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