Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

Yasuhiko Hayashi, Yasunori Agata, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno, Nobuhiko Sato, Takao Yonehara

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.

Original languageEnglish
Pages (from-to)L1354-L1357
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number11 SUPPL. B
Publication statusPublished - Nov 15 1998
Externally publishedYes

Keywords

  • Heterostructure GaAs/Si
  • Photoluminescence
  • Porous Si
  • Raman scattering
  • Thermal stress
  • Thin Si layer
  • X-ray diffraction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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